TW007D120E is built around Toshiba’s proprietary trench-gate structure^[1], which achieves industry-leading^[2] low On-resistance per unit area (R_DS(on)A); it reduces conduction loss through lower On-resistance while simultaneously achieving lower switching loss. Compared with Toshiba’s current products, TW007D120E reduces R_DS(on)A by approximately 58%^[3] and improves the figure of merit, On-resistance × gate-drain charge (R_DS(on) × Q_gd), which represents the trade-off between conduction loss and switching loss, by approximately 52%^[3]. These characteristics will help to realize highly efficient operation and reduced heat generation in data center power supply systems and contribute to improved overall system efficiency.