KAWASAKI, Japan — Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has expanded its lineup with the launch of “IX800FXF2YMS4,” a dual SiC MOSFET module for industrial equipment, including railway vehicles, renewable energy power generation systems and power conversion systems. The new module features Toshiba’s third-generation silicon carbide (SiC) MOSFET chips, a drain-source voltage rating of 3300V and a drain current (DC) rating of 800A. Its specifications state an I2t limit value in the diode section, an indicator of surge current capability. Read More
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Former TV reporter Richard Zussman to run for B.C. NDP in Saanich South
No other candidates in the riding have been announced. Source link





