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Toshiba Starts Shipping Test Samples of 1200V Trench-Gate SiC MOSFET that will Enhance Efficiency in Next-Generation AI Data Centers
TW007D120E is built around Toshiba’s proprietary trench-gate structure[1], which achieves industry-leading[2] low On-resistance per unit area (RDS(on)A); it reduces conduction loss through lower On-resistance while simultaneously achieving lower switching loss.…






