This milestone builds on TetraMem’s earlier work on the MX100 platform, fabricated on the TSMC 65nm CMOS process, where the company demonstrated multi-level RRAM devices with thousands of conductance levels (“Thousands of conductance levels in memristors integrated on CMOS,” Nature, March 2023), as well as high-precision analog computing capabilities (“Programming memristor arrays with arbitrarily high precision for analog computing,” Science, February 2024). These prior results established a strong scientific and engineering foundation for scaling the technology to more advanced nodes.